Semiconductor device manufactured by using conductive ion implan

Details Semiconductor device manufactured by using conductive ion implan Semiconductor device manufactured by using conductive ion implan

1990-04-17

1991-12-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437 34, 437229, 437931, H01L 21265

Patent

active

050752405

ABSTRACT:
A conductive resist film is used as a mask in ion implantation. A portion of the conductive resist film is electrically connected to a semiconductor substrate. The charge of ions which enter the conductive resist film in ion implantation flows into the semiconductor substrate and dissipates therein.

REFERENCES:
patent: 4361641 (1982-11-01), Angus et al.
patent: 4819057 (1989-04-01), Naito et al.
patent: 4933257 (1990-06-01), Miura et al.
patent: 4939556 (1990-07-01), Eguch et al.
Yoshida, Patent Abstracts of Japan, vol. 7, No. 194, #56-195214, filed: 3-12-81, published: 24-8-83.
Akiba et al., #60-116128, Patent Abstracts of Japan, vol. 9, No. 270, filed: 29-11-83, published: 26-10-85.
"Ion Implantation", VLSI Technology, chapter six, pp. 219-265, by T. E. Seidel, 1983.

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