Semiconductor device manufactured by selectively controlling gro

Details Semiconductor device manufactured by selectively controlling gro Semiconductor device manufactured by selectively controlling gro

1994-07-28

1996-12-03

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

257 96, 257103, 257627, 372 46, H01L 2906, H01L 2904, H01L 3300, H01S 319

Patent

active

055811167

ABSTRACT:
A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion.

REFERENCES:
patent: 4935936 (1990-06-01), Nelson et al.
patent: 4956682 (1990-09-01), Ohnaka et al.
patent: 5202285 (1993-04-01), Sugano et al.
patent: 5291033 (1994-03-01), Morishima
patent: 5373173 (1994-12-01), Ohata et al.
Patent Abstracts of Japan, vol. 17, No. 687 (E-1478), Dec. 16, 1993, and JP-A-05 2354-8 (Sharp Corp.), Sep. 10, 1993.
Patent Abstracts of Japan, vol 13, No. 51 (E-712), Feb. 6, 1989, and Jp-A-63 244625 (Fujitsu Ltd.), Oct. 12, 1988.
Patent Abstracts of Japan, vol 10, No. 201 (E-419), Jul. 15, 1986, and JP-A-61 044485 (Matsushita Electric Ind. Co. Ltd), Mar. 4, 1986
Kukimoto, H., et al., "Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs" J. Crystal Growth (1986) (1986) 77;223-228.

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