Semiconductor device manufacture

Details Semiconductor device manufacture Semiconductor device manufacture

1974-08-30

1976-05-18

Husack, Ralph

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156 11, 156 17, 427;93, H01L 2102

Patent

active

039580407

ABSTRACT:
A method of producing a semiconductor device comprising a silicon body in which there is located an oxide layer that is sunk locally from a surface of said body and over at least part of the thickness of said body, comprising the steps of providing said silicon body, locally providing on said silicon body surface a first masking layer capable of masking the underlying silicon against oxidation, forming a recess in a part of said silicon body at the area at which said sunken oxide layer is to be provided, covering the side walls of said recess with a second masking layer to protect the underlying silicon against oxidation and oxidizing said silicon at the unmasked area at the bottom of said recess to form said sunken oxide layer.

REFERENCES:
patent: 3810796 (1974-05-01), Skaggs et al.
patent: 3852104 (1974-12-01), Kooi et al.
patent: 3860466 (1975-01-01), Workman et al.
Local Oxidation of Silicon and its Application in Semiconductor Device Technology by Appels et al., Vol. 25, No. 2, Apr. 1970, pp. 118-132.
Phillips Res. Rep., (Netherlands), Vol. 25, No. 2.

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