Metal treatment – Compositions – Heat treating
Patent
1977-03-31
1978-08-22
Ozaki, G.
Metal treatment
Compositions
Heat treating
148178, 148188, H01L 21225
Patent
active
041086856
ABSTRACT:
An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577.degree. to 660.degree. C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.
REFERENCES:
patent: 4040868 (1977-08-01), Chang et al.
Anthony Thomas R.
Chang Mike F.
Cline Harvey E.
Cohen Joseph T.
General Electric Company
Ozaki G.
Watts Charles T.
Winegar Donald M.
LandOfFree
Semiconductor device manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1555749