Semiconductor device manufacture

Metal treatment – Compositions – Heat treating

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Details

148178, 148188, H01L 21225

Patent

active

041086856

ABSTRACT:
An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577.degree. to 660.degree. C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.

REFERENCES:
patent: 4040868 (1977-08-01), Chang et al.

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