Semiconductor device manufacture

Fishing – trapping – and vermin destroying

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437 67, 437228, 156644, 156649, 148DIG50, 148DIG106, H01C 2120

Patent

active

051963680

ABSTRACT:
A technique for achieving a substantially planar structure incorporating embedded vapor phase epitaxial growth involves the use of a window-frame shaped mask 40 of epitaxial growth resistant material to define a well in which embedded growth is to occur, and subsequently to ease mask registration problems in the location of a mask 60 employed while selectively removing unwanted material epitaxially grown on regions surrounding the well. Complementary format structures may also be formed in which epitaxial growth is provided up the sides of a mesa to substantially the same height as material grown on top of the mesa itself.

REFERENCES:
patent: 4609413 (1986-09-01), Boland
patent: 4757033 (1988-07-01), Ebata
patent: 4784970 (1988-11-01), Solomon
patent: 4824795 (1989-04-01), Blanchard
patent: 5094972 (1992-03-01), Pierce et al.

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