Semiconductor device manufacture

Metal treatment – Compositions – Heat treating

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148171, 148187, 148 332, 357 13, 357 56, 156649, H01L 21265

Patent

active

040281400

ABSTRACT:
A method of directly etching an inverted-mesa semiconductor structure, wherein the mesa is first formed by shallow etching from the epitaxial layer surface and then undercut by preferentially etching the substrate more rapidly than the epitaxial layer.

REFERENCES:
patent: 3226268 (1965-12-01), Bernard
patent: 3509428 (1970-04-01), Mankarious et al.
patent: 3510734 (1970-05-01), Mankarious et al.
patent: 3808555 (1974-04-01), Goedbloed
patent: 3886580 (1975-05-01), Calviello

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