Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1976-03-22
1977-08-09
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, 148187, 357 38, H01L 21225
Patent
active
040408787
ABSTRACT:
Diffusion of aluminium into a silicon semiconductor wafer from an annular or grid pattern of deposited metallic aluminium to form a p-type annular zone at least 75 microns deep. The diffusion is performed in an oxidizing atmosphere to inhibit aluminium contamination of the wafer portion bounded by the p-type annular zone and in which for instance a thyristor may subsequently be formed. The aluminium may be diffused through the whole thickness of the wafer to form a peripheral zone of the thyristor body.
REFERENCES:
patent: 3143444 (1964-08-01), Lowe et al.
patent: 3223560 (1965-12-01), Millington
patent: 3574009 (1971-04-01), Chizinsky et al.
patent: 3664894 (1972-05-01), Einthoven et al.
patent: 3914138 (1975-10-01), Rai-Choudhury
patent: 3933541 (1976-01-01), Hagino et al.
patent: 3979230 (1976-09-01), Anthony et al.
Ozaki G.
Trifari Frank R.
U.S. Philips Corporation
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