Semiconductor device manufacture

Details Semiconductor device manufacture Semiconductor device manufacture

1983-01-27

1985-10-15

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576W, 29578, 148187, H01L 21265, H01L 21312

Patent

active

045465347

ABSTRACT:
A first masking layer on a semiconductor body is defined by exposing a layer of negative acting radiation sensitive resist to a radiation pattern through a mask. Doped regions are then formed at unmasked surface areas of the body. A layer of positive acting resist is provided on an insulating layer at the surface of the body, and a second masking layer is defined in this layer by exposure to the pattern radiation beam through the same mask. An insulating layer pattern which is accurately aligned above the doping region is then formed by etching the exposed parts of the layer. Alternatively, the same type of resist is used at both exposure stages. By adjusting the resist processing, the second masking layer is made larger than the first masking layer. In this case, the second masking layer is used to define an oxygen mask before oxidizing the exposed surface of the body to form an accurately aligned oxide layer pattern.

REFERENCES:
patent: 3388000 (1968-06-01), Waters et al.
patent: 3920483 (1975-11-01), Johnson et al.
patent: 4231811 (1980-11-01), Somekh et al.
patent: 4253888 (1981-03-01), Kikuchi
patent: 4394181 (1983-07-01), Nicholas
patent: 4398964 (1983-08-01), Malwah
patent: 4420872 (1983-12-01), de Zaldivar

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