Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2007-12-18
2007-12-18
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S737000, C257S738000, C257S773000, C257S786000, C257SE43001
Reexamination Certificate
active
11085573
ABSTRACT:
A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.
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Naito Hiroshi
Sato Hideki
Dickstein & Shapiro LLP
Purvis Sue A.
Rodela Eduardo A.
Yamaha Corporation
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