Semiconductor device made from silicon carbide with a...

Details Semiconductor device made from silicon carbide with a... Semiconductor device made from silicon carbide with a...

2005-08-30

2005-08-30

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S109000, C257S421000

Reexamination Certificate

active

06936850

ABSTRACT:
The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.

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