Semiconductor device, liquid crystal display device, EL...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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Details

C257S075000, C257S347000, C438S166000, C438S486000, C438S487000

Reexamination Certificate

active

06906346

ABSTRACT:
This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistor40having a polycrystalline semiconductor layer11, the semiconductor layer11including a channel area22, highly doped drain areas24, 17positioned on both sides of the channel area22and LDD areas18a, 18bpositioned between the channel area22and the highly doped drain areas24, 17and lower in dopant density than the highly doped drain areas24, 17, wherein any diameter of the crystal14at least partly existing in the LDD area18bis larger than the size of other crystals15.

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patent: 6117752 (2000-09-01), Suzuki
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patent: 7-86604 (1995-03-01), None
patent: 11-64883 (1999-03-01), None
patent: 11-274502 (1999-10-01), None
patent: 2000-82669 (2000-03-01), None

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