Semiconductor device, liquid crystal display device and...

Details Semiconductor device, liquid crystal display device and... Semiconductor device, liquid crystal display device and...

2006-03-14

2006-03-14

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S765000, C257S758000

Reexamination Certificate

active

07012338

ABSTRACT:
A terminal interconnection45aincluding an aluminum alloy film4aand a nitrogen-containing aluminum film5alayered together is formed on a glass substrate2. Nitrogen-containing aluminum film5ain a contact portion12awithin a contact hole11aexposing the surface of terminal interconnection45ahas a predetermined thickness d1determined based on a specific resistance of the nitrogen-containing aluminum film. The thickness of the nitrogen-containing aluminum film outside the contact portion is larger than that of the nitrogen-containing aluminum film within the contact portion. Thereby, a semiconductor device or a liquid crystal display device having a reduced contact resistance and an appropriate resistance against chemical liquid is achieved.

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