Semiconductor device, light emitting diode head, and image...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

Reexamination Certificate

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Details

C257S079000, C257S690000, C257S026000, C257SE25032, C438S031000, C438S034000, C438S028000

Reexamination Certificate

active

08035116

ABSTRACT:
A semiconductor device includes a substrate; a first conductive type semiconductor layer disposed on a main surface of the substrate; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; a plurality of light emitting elements; and a second conductive side wiring pattern for commonly connecting the second conductive type semiconductor layer in the light emitting elements arranged adjacently. The second conductive type semiconductor layer includes a first conductive type semiconductor connection surface and a second conductive type semiconductor connection surface between the first conductive type semiconductor layer.

REFERENCES:
patent: 5895965 (1999-04-01), Tanaka et al.
patent: 6037612 (2000-03-01), Nishimura et al.
patent: 2006/0180818 (2006-08-01), Nagai et al.
patent: 2006/0192214 (2006-08-01), Ogihara et al.
patent: 10-035011 (1998-02-01), None

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