Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-06-26
2007-06-26
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S778000, C257S780000, C257S712000, C257SE23101
Reexamination Certificate
active
10973826
ABSTRACT:
A semiconductor device includes an interposer having first and second faces pointing in opposite directions to each other and a metallization pattern formed on the first face, and a semiconductor chip mounted on the first face of the interposer and having an electrode electrically connected with the metallization pattern. The interposer has a spacer formed within an overlapping region of the second face which the semiconductor chip overlaps and a land formed out of the overlapping region of the second face which the semiconductor chip overlaps. The spacer is formed so as not to be electrically connected with the metallization pattern, and the land is electrically connected with the metallization pattern.
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patent: 6611055 (2003-08-01), Hashemi
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patent: 07-036451 (1995-02-01), None
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patent: 2000-022340 (2000-01-01), None
Hogan & Hartson LLP
Parekh Nitin
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