Semiconductor device, its manufacture method and template...

Details Semiconductor device, its manufacture method and template... Semiconductor device, its manufacture method and template...

2008-03-27

2010-12-28

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C257SE21090, C257SE21461, C438S022000, C438S085000, C438S481000

Reexamination Certificate

active

07858436

ABSTRACT:
The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.

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H. Kato et al; Homoepitaxial Growth of High-Quality Zn-Polar ZnO Films by Plasma-Assisted Molecular Beam Epitaxy; Japan J. Appl. Phys. vol. 42, Aug. 15, 2003.
H. Kato et al; High-Quality ZnO Epilayers Grown on Zn-face ZnO Substrates by Plasma Assisted Molecular Beam Epitaxy; Journal of Crystal Growth; 2004.

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