Semiconductor device, its manufacture method and electronic...

Details Semiconductor device, its manufacture method and electronic... Semiconductor device, its manufacture method and electronic...

2008-09-30

2008-09-30

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S081000, C257S098000, C257SE33011

Reexamination Certificate

active

11204527

ABSTRACT:
A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.

REFERENCES:
patent: 5917202 (1999-06-01), Haitz et al.
patent: 6797987 (2004-09-01), Chen
patent: 5-251739 (1993-09-01), None
patent: 2001-044491 (2001-02-01), None
patent: 2001-189490 (2001-07-01), None
patent: 2002-217450 (2002-08-01), None

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