Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-05-03
2011-05-03
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S424000
Reexamination Certificate
active
07935610
ABSTRACT:
Structures and methods are disclosed for the electrical isolation of semiconductor devices. A method of forming a semiconductor device may include providing a second integrated device region on a substrate that is spaced apart from a first integrated device region. An isolation region may be interposed between the first integrated device region and the second integrated device region. The isolation region may include an isolation recess that projects into the substrate to a first predetermined depth, and that may be extended to a second predetermined depth.
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Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Smith Bradley K
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