Semiconductor device isolated by a pair of field oxide regions

Details Semiconductor device isolated by a pair of field oxide regions Semiconductor device isolated by a pair of field oxide regions

1988-03-31

1989-08-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 57, 437 70, 437938, H01L 21316, H01L 2176

Patent

active

048533408

ABSTRACT:
An integrated circuit semiconductor device having first and second circuit elements isolated by an improved isolation region is disclosed. The isolation region includes first and second thick insulating layers at least partly embedded in a semiconductor substrate of one conductivity and an impurity portion of one conductivity having a higher impurity concentration than that of the substrate, provided between the first and second thick insulating layers such that it is separated from both of the first and second circuit elements.

REFERENCES:
patent: 3751722 (1973-08-01), Richman
patent: 4095251 (1978-06-01), Dennard et al.
patent: 4114255 (1978-09-01), Salsbury et al.
patent: 4466174 (1984-08-01), Darley et al.
patent: 4519849 (1985-05-01), Korsh et al.
patent: 4523369 (1985-07-01), Nagakubo
patent: 4546536 (1985-10-01), Anantha et al.

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