Coherent light generators – Particular active media – Semiconductor
Patent
1984-08-13
1985-06-04
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 357 22, H01S 319
Patent
active
045218889
ABSTRACT:
A semiconductor device composed of a transistor for modulation and a semiconductor laser as one body, in which on the uppermost layer of a semiconductor laser composed of a multilayer epitaxial wafer, there is provided a layer consisting of a semiconductor of different conductivity type from that of the uppermost layer and having a V-shaped groove filled with a semiconductor zone of the same conductivity type as that of the uppermost layer, and ohmic electrodes are provided on the back surface of the substrate of the semiconductor laser, the semiconductor layer of different conductivity type and the semiconductor zone of the same conductivity type.
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Eichenberger et al., "Integrable FET Device", IBM Technical Disclosure Bulletin, vol. 13, No. 11, Apr. 1971, p. 3216.
Baliga, "A Power Junction Gate Field-Effect Transistor Structure with High Blocking Gain", IEEE Transaction on Electron Devices, vol. Ed-27, No. 2, Feb. 1980, pp. 368-373.
Hayashi Hideki
Kikuchi Kenichi
Davie James W.
Sumitomo Electric Industries Ltd.
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