Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-12-11
2009-11-17
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S706000, C257SE33001, C257SE33057
Reexamination Certificate
active
07619259
ABSTRACT:
The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a multi-layer structure which includes at least a second layer of a second semiconductor material. The light-emitting device is mounted on the first layer of the mounting base. Moreover, the difference of the thermal expansion coefficient between the first semiconductor material and the second semiconductor material is between a predetermined range.
REFERENCES:
patent: 7205573 (2007-04-01), Liu et al.
patent: 251388 (1981-09-01), None
Birch & Stewart Kolasch & Birch, LLP
High Power Optoelectronics, Inc.
Hoang Quoc D
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