Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-03-27
1994-11-15
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257349, 257351, 257354, 257634, 257650, H01L 2701, H01L 2713, H01L 2778
Patent
active
053650816
ABSTRACT:
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
REFERENCES:
patent: 4763183 (1988-08-01), Ng et al.
patent: 4786952 (1988-11-01), MacIver et al.
patent: 4875086 (1989-10-01), Malhi et al.
patent: 4933298 (1990-06-01), Hasegawa
patent: 5049968 (1991-09-01), Nakagawa et al.
Takemura Yasuhiko
Yamazaki Shunpei
Ngo Ngan Van
Semiconductor Energy Laboratory Co,. Ltd.
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