Semiconductor device incorporating multilayer wiring structure

Details Semiconductor device incorporating multilayer wiring structure Semiconductor device incorporating multilayer wiring structure

1996-04-29

1999-05-18

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257758, 257776, H01L23/535

Patent

active

059053070

ABSTRACT:
In a semiconductor device having multilayer wiring, upper metallization layers and elements or lower metallization layers are eletrically connected via embedded metals in contact holes or through holes. A diameter of each of the embedded metals is set larger than a width of each of the upper metallization layers, the lower metallization layers and/or terminals of the elements.

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