Semiconductor device incorporating a stepped contact hole

Details Semiconductor device incorporating a stepped contact hole Semiconductor device incorporating a stepped contact hole

1997-06-19

1999-09-14

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257904, H01L 23528

Patent

active

059527242

ABSTRACT:
Semiconductor elements, such as driving MOS transistors, transfer MOS transistors and the like are formed in a element region defined on the surface of a semiconductor substrate. A first interlayer insulation layer is formed on these surfaces. A grounding wiring layer is formed over substantially entire surface of the first interlayer insulation layer. Also, a silicon nitride layer and a second interlayer insulation layer are formed sequentially on the surface of the grounding wiring layer. Then, a first contact hole reaching a gate electrode of the driving MOS transistor is provided at a desired position. Then, a side wall insulation layer of silicon nitride layer is formed only on the side wall surface of the grounding wiring layer facing the contact hole.

REFERENCES:
patent: 5352916 (1994-10-01), Kiyono et al.
patent: 5661325 (1997-08-01), Hayashi et al.
patent: 5714778 (1998-02-01), Yamazaki

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