Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2005-04-12
2005-04-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257S621000, C257S048000
Reexamination Certificate
active
06879025
ABSTRACT:
A semiconductor device includes a dicing region provided on a semiconductor substrate to separate a plurality of semiconductor chips each having a gate portion from each other. The semiconductor device further includes a plurality of element isolation regions provided on a surface portion of the semiconductor substrate within the dicing region, a plurality of first dummy patterns formed on a surface of the semiconductor substrate so as to correspond to intervals of the plurality of element isolation regions, respectively, and a plurality of second dummy patterns formed above the semiconductor substrate within the dicing region so as to correspond to the plurality of first dummy patterns, respectively.
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Minami Toshifumi
Sasaki Miki
Ha Nathan W.
Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
Pham Long
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