Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2009-01-23
2010-11-30
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C438S666000
Reexamination Certificate
active
07843071
ABSTRACT:
A semiconductor construct is provided which has a semiconductor substrate, an external connection electrode, and an electrode enveloping layer for enveloping the external connection electrode. Also, a base plate is provided which includes a wiring having a first opening corresponding to the external connection electrode. Subsequently, the base plate is removed after the semiconductor construct is fixed to the base plate, and a second opening which reaches the external connection electrode is formed on the electrode enveloping layer corresponding to the first opening of the wiring. Then, a connection conductor for electrically connecting the wiring and the external connection electrode is formed.
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Japanese Office Action dated Jan. 12, 2010 and English translation thereof issued in a counterpart Japanese Application No. 2008-020693.
Chinese Office Action dated Mar. 29, 2010 and English translation thereof in counterpart Chinese Application No. 200910003372.9.
Casio Computer Co. Ltd.
Holtz Holtz Goodman & Chick PC
Lee Calvin
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