Semiconductor device including via hole and isolating circumfere

Details Semiconductor device including via hole and isolating circumfere Semiconductor device including via hole and isolating circumfere

1996-11-07

1999-06-29

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257506, 257508, H01L 2980, H01L 2900, H01L 31112

Patent

active

059172096

ABSTRACT:
A semiconductor device includes a semiconductor element, such as a field effect transistor, and an adjacent connection region including a via hole. A simple structure prevents leakage current from flowing from a p-type buffer layer to a source electrode of the field effect transistor through a backside electrode and a via hole upper electrode, avoiding degradation in the gate-source dielectric resistance. A groove having a depth extending from a surface of an n-type semiconductor layer through a n-type semiconductor layer and a p-type buffer layer isolates a field effect transistor from a via hole that extends from the surface of an n-type semiconductor layer to a second surface of a compound semiconductor substrate. The groove prevents leakage current from flowing in a backside electrode in the via hole.

REFERENCES:
patent: 5225707 (1993-07-01), Komaru et al.
patent: 5399900 (1995-03-01), Ko et al.
patent: 5521402 (1996-05-01), Ohsawa

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