Semiconductor device including via hole

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

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Details

257758, 257759, 257773, H01L 2348, H01L 2352, H01L 2940

Patent

active

056684134

ABSTRACT:
A semiconductor device has a semiconductor material substrate a first insulating film formed on the substrate, a first metallic wiring formed partly on the first insulating film, a second insulating film formed on the first insulating film, a second metallic wiring formed partly on the second insulating film and a via hole for electrically connecting the first metallic wiring and the second metallic wiring. The via hole has a lower portion which extends below the level of a top face of the first metallic wiring and is tapered to help keep the via hole electrically insulated from the substrate.

REFERENCES:
patent: 5317193 (1994-05-01), Watanabe
patent: 5365082 (1994-11-01), Gill et al.
patent: 5442238 (1995-08-01), Takata

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