Semiconductor device including ternary phase diffusion barrier

Details Semiconductor device including ternary phase diffusion barrier Semiconductor device including ternary phase diffusion barrier

2005-04-26

2005-04-26

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S757000, C257S761000, C257S763000, C257S764000, C257S766000, C257S767000

Reexamination Certificate

active

06885103

ABSTRACT:
A method for manufacturing a semiconductor device can simply form a silicide film for reducing ohmic contact between a metal line and a substrate and a ternary phase thin film as an amorphous diffusion prevention film between a metal line and the silicide film. The method for manufacturing a semiconductor device includes the steps of sequentially forming a first refractory metal and a second refractory metal on a semiconductor substrate, forming a silicide film on an interface between the semiconductor substrate and the first refractory metal, and reacting the semiconductor substrate with the first and second refractory metals on the silicide film to form a ternary phase thin film.

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