Semiconductor device including stress relaxation gaps for...

Details Semiconductor device including stress relaxation gaps for... Semiconductor device including stress relaxation gaps for...

2011-07-19

2011-07-19

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S211000, C257S700000, C257S759000, C257S760000, C257SE21016, C257SE21575

Reexamination Certificate

active

07982313

ABSTRACT:
By dividing a single chip area into individual sub-areas, a thermally induced stress in each of the sub-areas may be reduced during operation of complex integrated circuits, thereby enhancing the overall reliability of complex metallization systems comprising low-k dielectric materials or ULK material. Consequently, a high number of stacked metallization layers in combination with increased lateral dimensions of the semiconductor chip may be used compared to conventional strategies.

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