Semiconductor device including semiconductor element of high...

Details Semiconductor device including semiconductor element of high... Semiconductor device including semiconductor element of high...

2005-02-01

2005-02-01

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

C330S285000

Reexamination Certificate

active

06850120

ABSTRACT:
A first NMOS transistor has its source connected to ground and its drain connected to the source of a second NMOS transistor of high breakdown voltage via an inductor. The second NMOS transistor of high breakdown voltage has its drain connected to a power supply line Vdd via the inductor. An output Vout is provided from the drain of the second NMOS transistor. When an input voltage Vin is applied to the gate of the first NMOS transistor and a bias voltage Vg2is applied to the gate of the second NMOS transistor, the first and second NMOS transistors operate. The voltage amplitude of the load end of the second NMOS transistor of high breakdown voltage connected to the inductor swings about the power supply voltage. The voltage amplitude increases as the output voltage becomes higher.

REFERENCES:
patent: 6122532 (2000-09-01), Taylor
patent: 6133793 (2000-10-01), Lau et al.
patent: 6392490 (2002-05-01), Gramegna et al.
patent: 6556085 (2003-04-01), Kwon et al.
patent: 50-17992 (1975-02-01), None
patent: 60-20559 (1985-02-01), None

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