Semiconductor device including semiconductor diamond

Details Semiconductor device including semiconductor diamond Semiconductor device including semiconductor diamond

1993-09-09

1995-01-17

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257410, 257607, H01L 2978, H01L 2916, H01L 29167

Patent

active

053828097

ABSTRACT:
A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a gate electrode disposed on the p-type diamond layer. An intermediate region comprising diamond doped with at least an n-type dopant such as nitrogen atoms, is formed between the channel region and the gate electrode.

REFERENCES:
patent: 5107315 (1992-04-01), Kumagi et al.
patent: 5173761 (1992-12-01), Dreifus et al.
patent: 5254862 (1993-10-01), Kalyankjumar et al.
patent: 5298765 (1994-03-01), Nishimura

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