Semiconductor device including schotky gate of silicide and meth

Details Semiconductor device including schotky gate of silicide and meth Semiconductor device including schotky gate of silicide and meth

1988-07-25

1993-04-06

Quach, Tuan N.

Fishing, trapping, and vermin destroying

437178, 437200, 437912, H01L 21338

Patent

active

052003493

ABSTRACT:
A Schottky gate electrode of a refractory metal silicide is formed on a compound semiconductor, by which the barrier height is maintained satisfactorily even after heat treatment above 800.degree. C. Accordingly, it is possible to form an impurity diffused region using the Schottky gate electrode as a mask and then to effect the recrystallization of the semiconductor or the activation of the impurity by heat treatment, so that source and drain regions can be positioned by self-alignment relative to the gate electrode.

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