Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2006-08-15
2006-08-15
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257SE23039, C257SE23057, C257SE21654, C257SE25023, C257S686000, C257S723000, C257S691000, C257S724000, C257S728000, C257S777000, C257S666000, C257S676000, C257S528000, C257S355000, C257S357000, C257S354000, C257S668000, C257S532000
Reexamination Certificate
active
07091588
ABSTRACT:
A primary side circuit and a secondary side circuit are provided on first and second semiconductor substrates, respectively. A first capacitive insulator on the first substrate electrically insulates and isolates between the primary and secondary side circuits while permitting signal transmission between these circuits. A second capacitive insulator on the second semiconductor substrate electrically isolates the primary and secondary side circuit while permitting signal transmission therebetween. First and second frames are provided for input and output of signals to and from the primary and secondary side circuits. External electrodes of the first and second capacitive insulators are connected together by a third lead frame via a conductive adhesive body including more than one solder ball. The first and second substrates and the lead frames are sealed by a dielectric resin.
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Akiyama Noboru
Kamegaki Kazuyuki
Kojima Yasuyuki
Nemoto Minehiro
Yukutake Seigou
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Williams Alexander Oscar
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