Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1995-07-19
1999-01-26
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257197, 257712, H01L 310328, H01L 27082, H01L 2334
Patent
active
058641696
ABSTRACT:
A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved.
REFERENCES:
patent: 4794093 (1988-12-01), Tong et al.
patent: 4970578 (1990-11-01), Tong et al.
Bayraktaroglu et al, "Very High-Power-Density CW Operation Of GaAs/AlGaAs Microwave Heterojunction Bipolar Transistors", IEEE Electron Device Letters, vol. 14, No. 10, Oct. 1993, pp. 493-495.
Hattori Ryo
Katoh Manabu
Matsuoka Hiroshi
Sakai Masayuki
Shimura Teruyuki
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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