Semiconductor device including nonvolatile memories

Details Semiconductor device including nonvolatile memories Semiconductor device including nonvolatile memories

1993-01-11

1994-08-23

Limanek, Robert

Valves and valve actuation

Reciprocating valve

Gate

257324, 257316, 365184, H01L 2978

Patent

active

053410106

ABSTRACT:
The present invention can provide the memory circuit which has advantages in integration and the manufacturing expense and is easy to manufacture. The nonvolatile memory 21 comprises a P type well for which a N+ type source 4 and a N+ type drain 3 are provided. A surface of a space between the source 4 and the drain 3 comprises a first portion 10a and a second portion 10b. An insulating layer 6 for holding electrons spans the surface of the space. A memory gate electrode 5 is on the insulating layer 6 and spans the first portion 10a. A body 23 of high dielectric material is formed on the surface of the insulating layer 6 so that it connects to the memory gate electrode 5 through an insulating film 8 and spans the second portion 10b.

REFERENCES:
patent: 4725986 (1988-02-01), Kouba
patent: 4881108 (1989-11-01), Yoshikawa
patent: 5172199 (1992-12-01), Yamauchi et al.

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