Semiconductor device including nitride layer

Details Semiconductor device including nitride layer Semiconductor device including nitride layer

1991-10-31

1993-01-05

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

437241, 437228, H01L 2934, H01L 2348

Patent

active

051775883

ABSTRACT:
An improved semiconductor device having no posioned via produced therein includes a semiconductor substrate having a first conductor pattern formed thereon, a first insulator film provided on the semiconductor substrate to cover the first conductor pattern, and a coat applied onto the first insulator film to flatten an uneven surface of the first insulator film. A nitride layer having a thickness of 10.ANG. or more and including a binding of silicon and nitrogen is provided in a surface of the coat. A second insulator film is formed on the coat including the nitride layer. A via hole for exposing a portion of the surface of the first conductor pattern is formed to penetrate the first insulator film, the coat and the second insulator film. The device further includes a second conductor pattern having a portion thereof buried in the via hole and thereby connected to the first conductor pattern.

REFERENCES:
patent: 4349609 (1982-09-01), Takeda et al.
"Reduction of Water in Inorganic SOG by Plasma Treatment", Ito et al., Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, 1990, pp. 235-238.

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