Semiconductor device including multi-layered interconnection...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S760000

Reexamination Certificate

active

06972491

ABSTRACT:
The semiconductor device includes a semiconductor substrate and a multi-layer wiring portion including insulating layers and wiring layers alternately stacked one on another on a main surface of the semiconductor substrate. The resistance value of a wiring layer located on an upper side of an adjacent pair of wiring layers is lower than or equal to that of a wiring layer located on a lower side of the adjacent pair, and the resistance value of the lowermost layer is higher than that of the uppermost layer. The specific inductive capacity of an insulating layer located on an upper side of an adjacent pair of insulating layers is higher than or equal to that of an insulating layer located on a lower side of the adjacent pair, and the specific inductive capacity of the lowermost layer is lower than that of the uppermost layer.

REFERENCES:
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 11-186273 (1999-07-01), None
patent: 2003-257979 (2003-09-01), None
U.S. Appl. No. 10/778,180, filed Feb. 17, 2004, Yamada et al.
U.S. Appl. No. 11/095,567, filed Apr. 1, 2005, Higashi et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device including multi-layered interconnection... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including multi-layered interconnection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including multi-layered interconnection... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3509392

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.