Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Non-heterojunction superlattice
Reexamination Certificate
2005-05-24
2005-05-24
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Non-heterojunction superlattice
C257S020000, C257S288000
Reexamination Certificate
active
06897472
ABSTRACT:
A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally adjacent the superlattice channel, and a gate overlying the superlattice channel for causing transport of charge carriers through the superlattice channel in a parallel direction relative to the stacked groups of layers. Each group of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice channel may have a higher charge carrier mobility in the parallel direction than would otherwise occur.
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Dukovski Ilija
Hytha Marek
Kreps Scott A.
Mears Robert J.
Sow Fook Yiptong Jean Augustin Chan
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Pham Long
RJ Mears, LLC
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