Semiconductor device including MOSFET and isolation region...

Details Semiconductor device including MOSFET and isolation region... Semiconductor device including MOSFET and isolation region...

2008-05-13

2008-05-13

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S401000, C257SE29264, C438S283000

Reexamination Certificate

active

07372086

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a MOSFET including a double gate structure provided on the semiconductor substrate, and an isolation region for isolating the MOSFET from other elements comprising a trench provided on the surface of the semiconductor substrate and an insulator provided in the trench, a part of the isolation region in the trench around the MOSFET having a bottom deeper than other part of the isolation region.

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Notification of Reasons for Rejection issued in Japanese Patent Application 2003-129177 by the Japanese Patent Office and English translation thereof.

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