Semiconductor device including memory cell and anti-fuse...

Details Semiconductor device including memory cell and anti-fuse... Semiconductor device including memory cell and anti-fuse...

2007-08-31

2009-10-13

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to conductive state

C438S600000, C257SE21592

Reexamination Certificate

active

07601564

ABSTRACT:
A semiconductor device includes an anti-fuse portion and a memory cell portion each including a MOSFET structure having a gate insulating film formed on a semiconductor substrate and a gate electrode formed on the gate insulating film; wherein a depletion ratio in the gate electrode of the anti-fuse portion is different from the depletion ratio in the gate electrode of the memory cell portion, and the depletion ratio in the gate electrode of the anti-fuse portion is lower than the depletion ratio in the gate electrode of the memory cell portion.

REFERENCES:
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 6452248 (2002-09-01), Le
patent: 6753590 (2004-06-01), Fifield et al.
patent: 6774439 (2004-08-01), Fukuzumi et al.
patent: 2002/0117724 (2002-08-01), Ariyoshi et al.
patent: 2001-308283 (2001-11-01), None
patent: 2002-134620 (2002-05-01), None
patent: 2003-86768 (2003-03-01), None
patent: 2003-115537 (2003-04-01), None
Yasuhiro Fukaura, et al., “A Highly Manufacturable High Density embedded SRAM Technology for 90nm CMOS”, IEDM 2002, pp. 415-418.

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