Semiconductor device including interlayer dielectric film layers

Details Semiconductor device including interlayer dielectric film layers Semiconductor device including interlayer dielectric film layers

1996-06-06

1998-01-27

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437190, H01L 21441

Patent

active

057121940

ABSTRACT:
A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes and is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. A second interlayer dielectric film layer is formed on the first conductive film layer and is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and a upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed to form second connection holes. A second conductive film layer is formed thereon and is composed of two layers of refractory metal film in the bottom layer and aluminum alloy film in the top layer.

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