Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1994-04-14
1996-01-23
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257640, 257437, 437978, H01L 2358
Patent
active
054867193
ABSTRACT:
In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.
REFERENCES:
patent: 3884698 (1994-05-01), Kakihama et al.
patent: 4910122 (1990-03-01), Arnold et al.
patent: 5285102 (1994-02-01), Ying
Sugiura Souichi
Watanabe Hidehiro
Yoshida Seiko
Crane Sara W.
Guay John F.
Kabushiki Kaisha Toshiba
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