Semiconductor device including IIL and vertical transistors

Details Semiconductor device including IIL and vertical transistors Semiconductor device including IIL and vertical transistors

1992-08-05

1994-07-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257513, 257520, 257574, H01L 29730, H01L 29120, H01L 29460

Patent

active

053311981

ABSTRACT:
The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1) . The IIL comprises an emitter, a base and a collector which are respectively comprised of a high-density n.sup.+ -type first buried layer (5), a p.sup.+ -type second buried layer (8) having a lower impurity density than the n.sup.+ -type first buried layer (5), and at least one of n.sup.+ -type diffused layer (31). The semiconductor device thus constituted makes it possible to increase the emitter injection efficiency while the base impurity density is kept high, and also to decrease the base width, so that the collector-emitter breakdown voltage and current gain of the IIL can be more improved and also the operation speed of the IIL can be made higher.

REFERENCES:
patent: 4749661 (1988-06-01), Bower
patent: 4826780 (1989-05-01), Takemoto et al.
patent: 4984048 (1991-01-01), Sagara et al.

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