Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-12-20
2005-12-20
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S566000, C257S575000, C438S340000, C438S357000, C438S358000
Reexamination Certificate
active
06977426
ABSTRACT:
In a semiconductor device comprising a first bipolar transistor and a second bipolar transistor having different voltages formed on a semiconductor substrate made by forming an epitaxial layer on a silicon substrate, in an upper part of the silicon substrate the first bipolar transistor has an N+-type first embedded diffusion layer having an impurity concentration higher than that of the epitaxial layer and the second bipolar transistor has an N-type second embedded diffusion layer having a lower impurity concentration and a deeper diffusion layer depth than the first embedded diffusion layer, whereby a high speed bipolar transistor and a high voltage bipolar transistor are formed on the same substrate.
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Ammo Hiroaki
Gomi Takayuki
Nadav Ori
Sonnenschein Nath & Rosenthal LLP
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