Semiconductor device including Gallium nitride layer

Details Semiconductor device including Gallium nitride layer Semiconductor device including Gallium nitride layer

1997-09-11

1999-03-09

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 76, 257201, 257615, 372 45, H01L 3300

Patent

active

058804854

ABSTRACT:
A high-quality gallium nitride layer is grown on a surface of a substrate which is exposed through a dielectric mask on the substrate. The high-quality gallium nitride layer has a composition expressed by the chemical formula:

REFERENCES:
patent: 4077817 (1978-03-01), Bellavance
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5218216 (1993-06-01), Manabe et al.
patent: 5741360 (1998-04-01), Goto et al.
patent: 5795798 (1998-08-01), Mishra et al.
Kato et al., "Selective Growth Of Murtzite GaN And A1.sub.x Ga.sub.1-x N On GaN/Sapphire Substrates By Metalorganic Vapor Phase Epitaxy", Journal of Crystal Growth, Vol. 144, 1994, pp. 133-140.
Redwing et al., "Optically Pumped Vertical Cavity Surface Emittine Laser Operation In GaN-A1GaN Heterostructures", International Symposium on Blue Laser and Light Emitting Diodes, Mar. 1996, pp. 267-270.

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