Semiconductor device including fuse elements and bonding pad

Details Semiconductor device including fuse elements and bonding pad Semiconductor device including fuse elements and bonding pad

2007-04-09

2008-09-09

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S529000, C257SE21592

Reexamination Certificate

active

07423301

ABSTRACT:
A semiconductor device includes a lower-layer substrate, a fuse above the lower-layer substrate and blown by radiation with light, a silicon oxide film on the fuse and on an exposed portion of the surface of the lower-layer substrate, and a silicon nitride film on the silicon oxide film. The portion of the silicon oxide film on the surface of the lower-layer substrate is thicker than the fuse, and the silicon oxide film has an opening opposite the fuse.

REFERENCES:
patent: 5360988 (1994-11-01), Uda et al.
patent: 6563188 (2003-05-01), Nagatani
patent: 6656826 (2003-12-01), Ishimaru
patent: 2002/0062549 (2002-05-01), Hewson et al.
patent: 2004/0012071 (2004-01-01), Ido et al.
patent: 2002-110799 (2002-04-01), None
patent: 2002-203902 (2002-07-01), None

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