Semiconductor device including fluorine diffusion barrier...

Details Semiconductor device including fluorine diffusion barrier... Semiconductor device including fluorine diffusion barrier...

2007-08-24

2009-06-02

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S627000

Reexamination Certificate

active

07541675

ABSTRACT:
A semiconductor device including a fluorine diffusion barrier layer and a method for manufacturing the same are provided. The semiconductor device includes a specific pattern formed over a semiconductor substrate, a fluorine diffusion barrier layer formed over the specific pattern, and an interlayer insulating layer containing fluorine formed over the fluorine diffusion barrier layer. The fluorine diffusion barrier layer may be used to essentially prevent fluorine from being diffused into a specific pattern formed of a metal or tetra-ethyl-ortho-silicate (TEOS) layer and thus to prevent corrosion and void formation that might otherwise be caused by HF.

REFERENCES:
patent: 6764940 (2004-07-01), Rozbicki et al.
patent: 2007/0128860 (2007-06-01), Hou et al.
patent: 1020030001937 (2003-01-01), None
patent: 1020040049801 (2004-06-01), None

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