Semiconductor device including ESD protection field effect...

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Reexamination Certificate

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C361S111000

Reexamination Certificate

active

07817385

ABSTRACT:
In a semiconductor device including two circuit blocks, an ESD protection circuit between power supply terminals (or ground terminals) of the two circuit blocks having the same voltage level as each other is constructed by at least one diode-connected field effect transistor whose back gate potential is adjusted by a back gate potential adjusting circuit. As a result, the absolute value of the threshold voltage and the ON resistance of the ESD protection circuit can be changed in accordance with whether the operation mode is an ESD protection operation mode or a usual operation mode.

REFERENCES:
patent: 6011681 (2000-01-01), Ker et al.
patent: 6075686 (2000-06-01), Ker
patent: 6208494 (2001-03-01), Nakura et al.
patent: 2004/0212936 (2004-10-01), Salling et al.
patent: 63-036557 (1988-02-01), None

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