Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-03-06
2007-03-06
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S758000, C257S751000, C257S752000, C257S761000, C257S762000, C257S763000, C257SE21570, C257SE21020, C438S233000
Reexamination Certificate
active
10853492
ABSTRACT:
A method (and structure) of forming an interconnect on a semiconductor substrate, includes forming a relatively narrow first structure in a dielectric formed on a semiconductor substrate, forming a relatively wider second structure in the dielectric formed on the semiconductor substrate, forming a liner in the first and second structures such that the first structure is substantially filled and the second structure is substantially unfilled, and forming a metallization over the liner to completely fill the second structure.
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S. Wolf, Silicon Processing for the VLSI ERA-2, 1990, p. 194.
Clevenger Lawrence A.
Nesbit Larry A.
Estrada Michelle
International Business Machines - Corporation
McGinn IP Law Group PLLC
Tobergte Nicholas J.
Trepp, Esq. Robert M.
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