Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1998-02-02
1999-05-25
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 18, 257192, H01L 310328
Patent
active
059071613
ABSTRACT:
A semiconductor device includes a III-V compound semiconductor layer including two or more Group III elements and containing dopant impurities, including a spontaneous superlattice, and having a stripe shape with two ends, and electrodes disposed on the ends of the stripe shaped semiconductor layer to form a resistor element. Because of the spontaneous superlattice, electrons are one-dimensionally confined within the III-V compound semiconductor layer, i.e., the electrons flow easier in the direction perpendicular to the periodic direction of the spontaneous superlattice than in the direction parallel to it, resulting in anisotropic electrical resistivity. Therefore, the orientation of the resistor element with respect to the periodic direction of the spontaneous superlattice becomes another factor in determining the resistance of the resistor element. In particular, resistances of the resistor elements of identical stripe shape can be made considerably different from each other, if one is perpendicular to the periodic direction of the spontaneous superlattice and another is parallel to it.
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Kimura Tatuya
Ochi Seiji
Hardy David B.
Mitsubishi Denki Kabushikikaisha
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